FDMS7570S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Ohm

FDMS7570S
N-Channel PowerTrench^® SyncFET^TM
25 V, 49 A, 1.95 mΩ
December 2009
Features
„ Max r_DS(on) = 1.95 mΩ at V_GS = 10 V, I_D = 28 A
„ Max r_DS(on) = 2.85 mΩ at V_GS = 4.5 V, I_D = 22 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
The FDMS7570S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for Synchronous Buck Converters
„ Notebook
„ Server
„ Telecom
„ High Efficiency DC-DC Switch Mode Power Supplies
Top
Bottom
Pin 1
S
D₅
4G
S
S
G
D₆
3S
D
D
D
Power 56
D
D₇
D8
2S
1^S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
49
156
28
180
144
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.5
(Note 1a)
50
°C/W
Device Marking
FDMS7570S
Device
FDMS7570S
©2009 Fairchild Semiconductor Corporation
FDMS7570S Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
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