FDMS7560S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ

FDMS7560S
N-Channel PowerTrench^® SyncFET^TM
25 V, 49 A, 1.45 mΩ
August 2011
Features
General Description
„ Max r_DS(on) = 1.45 mΩ at V_GS = 10 V, I_D = 30 A
„ Max r_DS(on) = 2.1 mΩ at V_GS = 4.5 V, I_D = 26 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS7560S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for Synchronous Buck Converters
„ Notebook
„ Server
„ Telecom
„ High Efficiency DC-DC Switch Mode Power Supplies
Top
Bottom
Pin 1
S
S
S
G
D₅
D₆
4G
3S
Power 56
D
D
D
D
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D₇
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1^S
Ratings
25
±20
49
181
30
180
220
89
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.4
(Note 1a)
50
°C/W
Device Marking
FDMS7560S
Device
FDMS7560S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS7560S Rev.C1
www.fairchildsemi.com