FDMS6673BZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -30 V, -28 A, 6.8 mΩ

FDMS6673BZ
P-Channel PowerTrench^® MOSFET
-30 V, -28 A, 6.8 m:
August 2009
Features
General Description
„ Max r_DS(on) = 6.8 m: at V_GS = -10 V, I_D = -15.2 A
„ Max r_DS(on) = 12.5 m: at V_GS = -4.5 V, I_D = -11.2 A
„ Advanced Package and Silicon combination
for low r_DS(on)
„ HBM ESD protection level of 8 kV typical(note 3)
„ MSL1 robust package design
„ RoHS Compliant
The FDMS6673BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r_DS(on) and
ESD protection.
Applications
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-28
-90
-15.2
-120
73
2.5
-55 to +150
Units
V
V
A
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.7
(Note 1a)
50
°C/W
Device Marking
FDMS6673BZ
Device
FDMS6673BZ
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS6673BZ RevC3
www.fairchildsemi.com