FDMS4435BZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ

FDMS4435BZ
P-Channel PowerTrench^® MOSFET
-30 V, -18 A, 20 mΩ
Features
„ Max r_DS(on) = 20 mΩ at V_GS = -10 V, I_D = -9.0 A
„ Max r_DS(on) = 37 mΩ at V_GS = -4.5 V, I_D = -6.5 A
„ Extended V_GSS range (-25 V) for battery applications
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ HBM ESD protection level >7 kV typical (Note 4)
„ 100% UIL tested
„ Termination is Lead-free and RoHS Compliant
March 2011
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
„ High side in DC-DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
-30
±25
-18
-35
-9.0
-50
18
39
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS4435BZ
Device
FDMS4435BZ
Package
Power 56
3.2
(Note 1a)
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS4435BZ Rev.C3
www.fairchildsemi.com