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FDMS3602S Datasheet, PDF (1/15 Pages) Fairchild Semiconductor – 25 V Asymmetric Dual N-Channel MOSFET Features | |||
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FDMS3602S
PowerTrench® Power Stage
August 2011
25 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
 Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
 Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
 Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A
 Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
 Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
 MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
 RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
 Computing
 Communications
 General Purpose Point of Load
 Notebook VCORE
 Server
Pin 1
G1 D1 D1 D1
D1
PHASE
(S1/D2)
G2S2
S2 S2
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5
S2 6
S2 7
G2 8
Q2
4 D1
PHASE
3 D1
2 D1
Q1
1 G1
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25°C
TA = 25°C
Q1
Q2
25
25
±20
±20
30
40
65
151a
135
261b
40
504
2.21a
1.01c
100
1445
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.5
501b
1201d
2
°C/W
Device Marking
22OA
N7OC
Device
FDMS3602S
Package
Power 56
Reel Size
13â
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS3602S Rev.C5
www.fairchildsemi.com
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