FDMS3600S Datasheet, PDF (1/15 Pages) Fairchild Semiconductor – PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET

FDMS3600S
PowerTrench^® Power Stage
August 2011
25 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 5.6 mΩ at V_GS = 10 V, I_D = 15 A
„ Max r_DS(on) = 8.1 mΩ at V_GS = 4.5 V, I_D = 14 A
Q2: N-Channel
„ Max r_DS(on) = 1.6 mΩ at V_GS = 10 V, I_D = 30 A
„ Max r_DS(on) = 2.4 mΩ at V_GS = 4.5 V, I_D = 25 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
„ Server
Pin 1
G1 _{D1 D1 D1}
D1
PHASE
(S1/D2)
G2S2
S2 _S2
Top
Power 56
Bottom
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 ₅
S2 6
S2 ₇
G2 ₈
Q2
4 ^D1
PHASE
3 D1
2 ^D1
Q1
1 G1
(Note 3)
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
T_A = 25 °C
T_A = 25 °C
Q1
Q2
25
25
±20
±20
30
40
65
15^1a
155
30^1b
40
50⁴
2.2^1a
1.0^1c
100
200⁵
2.5^1b
1.0^1d
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
57^1a
125^1c
3.5
50^1b
120^1d
2
°C/W
Device Marking
22OA
N9OC
Device
FDMS3600S
©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
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