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FDMS2572_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ | |||
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February 2007
FDMS2572
N-Channel UltraFET Trench® MOSFET
tm
150V, 27A, 47mâ¦
Features
General Description
 Max rDS(on) = 47m⦠at VGS = 10V, ID = 4.5A
 Max rDS(on) = 53m⦠at VGS = 6V, ID = 4.5A
 Low Miller Charge
 Optimized efficiency at high frequencies
 UIS Capability (Single pulse and Repetitive pulse)
 RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
 Distributed Power Architectures and VRMs
 Primary Switch for 24V and 48V Systems
 High Voltage Synchronous Rectifier
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
150
±20
27
27
4.5
30
78
2.5
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking
FDMS2572
Device
FDMS2572
Package
Power 56
Reel Size
13ââ
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMS2572 Rev.C2
www.fairchildsemi.com
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