FDMS030N06B Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 100A, 3m

August 2012
FDMS030N06B
N-Channel PowerTrench^® MOSFET
60V, 100A, 3m
Features
• R_DS(on) = 2.4m (Typ.)@ V_GS = 10V, I_D = 50A
• Advanced Package and Silicon Combination for Low R_DS(on)
and High Efficiency
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger
• AC Motor Drives and Uninterruptible Power Supplies
• Off-line UPS
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_A = 25^oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(T_C = 25^oC)
(T_A = 25^oC)
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
D5
D6
D7
D8
4G
3S
2S
1S
(Note1)
(Note 2a)
(Note 3)
(Note 4)
(Note 2a)
FDMS030N06B
60
±20
100
22.1
400
248
104
2.5
-55 to +150
Units
V
V
A
A
mJ
W
W
o_C
(Note 2a)
FDMS030N06B
1.2
50
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDMS030N06B Rev. C0
www.fairchildsemi.com