FDML7610S Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ

FDML7610S
Dual N-Channel PowerTrench^® MOSFET
N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ
April 2010
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 7.5 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 12 mΩ at V_GS = 4.5 V, I_D = 10 A
Q2: N-Channel
„ Max r_DS(on) = 4.2 mΩ at V_GS = 10 V, I_D = 17 A
„ Max r_DS(on) = 5.5 mΩ at V_GS = 4.5 V, I_D = 14 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook V_CORE
Pin 1
D1 ^{D1 D1}
G1
D1
S2
D1
S1/D2
S2
D1
S2
D1
G2S2 ^S2S2
G2
G1
Top
MLP 3X4.5
Bottom
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
T_A = 25 °C
T_A = 25 °C
Q1
Q2
30
30
±20
±20
30
28
40
12^1a
60
17^1b
40
2.1^1a
0.8^1c
40
2.2^1b
0.9^1d
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
60^1a
150^1c
4
56^1b
140^1d
3.5
°C/W
Device Marking
FDML7610S
Device
FDML7610S
Package
MLP3X4.5
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDML7610S Rev.C
www.fairchildsemi.com