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| FDMJ1028N Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.2A, 90mΩ | |||
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June 2006
FDMJ1028N
N-Channel 2.5V Specified PowerTrench® MOSFET tm
20V, 3.2A, 90mâ¦
Features
 Max rDS(on) = 90m⦠at VGS = 4.5V
 Max rDS(on) = 130m⦠at VGS = 2.5V
 Low gate charge
 High performance trench technology for extremely low
rDS(on)
 RoHS Compliant
General Description
This dual N-Channel 2.5V specified MOSFET uses
Fairchild's advanced low voltage PowerTrench process.
The rDS(on) and thermal properties of the device are
optimized for battery power management applications.
Applications
 Battery management
 Baseband Switches
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJA
Thermal Resistance , Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
028
Device
FDMJ1028N
Reel Size
7ââ
Tape Width
8mm
Ratings
20
±12
3.2
12
1.4
0.8
-55 to +150
Units
V
V
A
W
°C
89
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMJ1028N Rev. C
www.fairchildsemi.com
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