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FDMJ1023PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench® MOSFET
August 2007
FDMJ1023PZ
Dual P-Channel PowerTrench® MOSFET
tm
–20V, –2.9A, 112mΩ
Features
General Description
„ Max rDS(on) = 112mΩ at VGS = –4.5V, ID = –2.9A
„ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.4A
„ Max rDS(on) = 210mΩ at VGS = –1.8V, ID = –2.1A
„ Max rDS(on) = 300mΩ at VGS = –1.5V, ID = –1.0A
„ Low gate charge, high power and current handling capability
„ HBM ESD protection level > 1.5kV typical (Note 3)
„ RoHS Compliant
This dual P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench® process. This device is designed
specifically as a single package solution for the battery charge
switch in cellular handset and other ultra-portable applications. It
features two independent P-Channel MOSFETs with low
on-state resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible. The SC-75 MicroFET
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
Applications
„ Battery management/charger application
Pin 1
S1 S2 G2
Bottom Drain Contact
D1
D2
S2 4
S1 5
Q2
3 G2
2 S2
G1 S1 S2
SC-75 MicroFET
G1 6
Q1
1 S1
Bottom Drain Contact
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–2.9
–12
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
89
°C/W
(Note 1b)
182
Device Marking
023
Device
FDMJ1023PZ
Package
SC-75 MicroFET
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMJ1023PZ Rev.B
www.fairchildsemi.com