FDME910PZT Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET

FDME910PZT
P-Channel PowerTrench^® MOSFET
-20 V, -8 A, 24 mΩ
Features
„ Max r_DS(on) = 24 mΩ at V_GS = -4.5 V, I_D = -8 A
„ Max r_DS(on) = 31 mΩ at V_GS = -2.5 V, I_D = -7 A
„ Max r_DS(on) = 45 mΩ at V_GS = -1.8 V, I_D = -6 A
„ Low profile: 0.55 mm maximum in the new package MicroFET
1.6x1.6 Thin
„ HBM ESD protection level > 2 kV typical (Note 3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
May 2012
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 1.6x1.6 Thin
package offers exceptional thermal performance for its physical
size and is well suited to switching and linear mode applications.
G
D
D
Pin 1
S
D
D
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-8
-32
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1a)
175
°C/W
Device Marking
E91
Device
FDME910PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
1
FDME910PZT Rev.C
www.fairchildsemi.com