FDME510PZT Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ

FDME510PZT
P-Channel PowerTrench^® MOSFET
-20 V, -6 A, 37 mΩ
Features
„ Max r_DS(on) = 37 mΩ at V_GS = -4.5 V, I_D = -5 A
„ Max r_DS(on) = 50 mΩ at V_GS = -2.5 V, I_D = -4 A
„ Max r_DS(on) = 65 mΩ at V_GS = -1.8 V, I_D = -3 A
„ Max r_DS(on) = 100 mΩ at V_GS = -1.5 V, I_D = -2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 2400V (Note3)
„ RoHS Compliant
November 2011
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Pin 1
G
D
D
S
D
D
D
D
D
D
G
S
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation for Single Operation
T_A = 25 °C
Power Dissipation for Single Operation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-6
-15
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1b)
175
°C/W
Device Marking
7T
Device
FDME510PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2011 Fairchild Semiconductor Corporation
1
FDME510PZT Rev.C1
www.fairchildsemi.com