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FDME430NT Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ | |||
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October 2012
FDME430NT
N-Channel PowerTrench® MOSFET
30 V, 6 A, 40 mΩ
Features
General Description
 Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
 Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
 Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A
 Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
 Free from halogenated compounds and antimony oxides
 RoHS Compliant
This single N-Channel MOSFET has been designed using
Fairchild Semiconductorâs advanced PowerTrench® process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
Applications
 Li-lon Battery Pack
 Baseband Switch
 Load Switch
 DC-DC Conversion
G
D
Pin 1 D
S
D
D
D
D
D
D
G
S
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±12
6
30
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1b)
175
°C/W
Device Marking
YA
Device
FDME430NT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ââ
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
1
FDME430NT Rev.C1
www.fairchildsemi.com
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