FDME410NZT Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 20 V, 7 A, 26 mΩ

November 2011
FDME410NZT
N-Channel PowerTrench^® MOSFET
20 V, 7 A, 26 mΩ
Features
General Description
„ Max r_DS(on) = 26 mΩ at V_GS = 4.5 V, I_D = 7 A
„ Max r_DS(on) = 31 mΩ at V_GS = 2.5 V, I_D = 6 A
„ Max r_DS(on) = 39 mΩ at V_GS = 1.8 V, I_D = 5 A
„ Max r_DS(on) = 53 mΩ at V_GS = 1.5 V, I_D = 4 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1800V (Note3)
„ RoHS Compliant
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r_DS(ON) @ VGS = 1.5 V on special MicroFET
leadframe.
Applications
„ Li-lon Battery Pack
„ Baseband Switch
„ Load Switch
„ DC-DC Conversion
G
D
Pin 1 ^D
D
D
S
D
D
D
D
G
S
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation for Single Operation
T_A = 25 °C
Power Dissipation for Single Operation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
7
15
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1b)
175
°C/W
Device Marking
6T
Device
FDME410NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2011 Fairchild Semiconductor Corporation
1
FDME410NZT Rev.C1
www.fairchildsemi.com