FDME1034CZT Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ

July 2010
FDME1034CZT
Complementary PowerTrench^® MOSFET
N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 66 mΩ at V_GS = 4.5 V, I_D = 3.4 A
„ Max r_DS(on) = 86 mΩ at V_GS = 2.5 V, I_D = 2.9 A
„ Max r_DS(on) = 113 mΩ at V_GS = 1.8 V, I_D = 2.5 A
„ Max r_DS(on) = 160 mΩ at V_GS = 1.5 V, I_D = 2.1 A
Q2: P-Channel
„ Max r_DS(on) = 142 mΩ at V_GS = -4.5 V, I_D = -2.3 A
„ Max r_DS(on) = 213 mΩ at V_GS = -2.5 V, I_D = -1.8 A
„ Max r_DS(on) = 331 mΩ at V_GS = -1.8 V, I_D = -1.5 A
„ Max r_DS(on) = 530 mΩ at V_GS = -1.5 V, I_D = -1.2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony
oxides
This device is designed specifically as a single package solution
for a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra-portable applications. It features an independent
N-Channel & P-Channel MOSFET with low on-state resistance
for minimum conduction losses. The gate charge of each
MOSFET is also minimized to allow high frequency switching
directly from the controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ DC-DC Conversion
„ Level Shifted Load Switch
„ HBM ESD protection level > 1600 V (Note 3)
„ RoHS Compliant
Pin 1
D2
G1
S1
D2
D1
S2
G2
D1
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation for Single Operation T_A = 25 °C
Power Dissipation for Single Operation T_A = 25 °C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
5T
Device
FDME1034CZT
©2010 Fairchild Semiconductor Corporation
FDME1034CZT Rev.C1
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Q1
Q2
20
-20
±8
±8
3.8
-2.6
6
-6
1.4
0.6
-55 to +150
Units
V
V
A
W
°C
90
°C/W
195
Tape Width
8 mm
Quantity
5000 units
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