FDME1024NZT Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m

July 2010
FDME1024NZT
Dual N-Channel PowerTrench^® MOSFET
20 V, 3.8 A, 66 mΩ
Features
„ Max r_DS(on) = 66 mΩ at V_GS = 4.5 V, I_D = 3.4 A
„ Max r_DS(on) = 86 mΩ at V_GS = 2.5 V, I_D = 2.9 A
„ Max r_DS(on) = 113 mΩ at V_GS = 1.8 V, I_D = 2.5 A
„ Max r_DS(on) = 160 mΩ at V_GS = 1.5 V, I_D = 2.1 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600 V (Note 3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Baseband Switch
„ Load Switch
Pin 1
D2
G1
S1
D1
D2
S2
G2
D1
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation for Single Operation T_A = 25 °C
Power Dissipation for Single Operation T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
3.8
6
1.4
0.6
-55 to +150
Units
V
V
A
W
°C
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
90
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1b)
195
Package Marking and Ordering Information
°C/W
Device Marking
4T
Device
FDME1024NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
1
FDME1024NZT Rev.C1
www.fairchildsemi.com