FDMD8280 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel Power Trench® MOSFET

October 2014
FDMD8280
Dual N-Channel Power Trench^® MOSFET
80 V, 40 A, 8.2 mΩ
Features
General Description
„ Max r_DS(on) = 8.2 mΩ at V_GS = 10 V, I_D = 11 A
„ Max r_DS(on) = 11 mΩ at V_GS = 8 V, I_D = 9.5 A
„ Ideal for flexible layout in primary side of bridge topology
„ Termination is Lead-free and RoHS Compliant
„ 100% UIL tested
„ Kelvin High Side MOSFET drive pin-out capability
This device includes two 80V N-Channel MOSFETs in a dual
Power (3.3 mm X 5 mm) package. HS source and LS Drain
internally connected for half/full bridge, low source inductance
package, low r_DS(on)/Qg FOM silicon.
Applications
„ Synchronous Buck : Primary Switch of Half / Full bridge
converter for telecom
„ Motor Bridge : Primary Switch of Half / Full bridge converter
for BLDC motor
„ MV POL : 48V Synchronous Buck Switch
Pin 1
Power 3.3 x 5
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D1 1
D1 2
D1 3
G2 4
S2 5
S2 6
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
12 G1
11 G1R
10 ^D2/S1
9 D2/S1
8 D2/S1
7 D2/S1
Ratings
80
±20
40
11
160
150
38
2.1
1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.3
(Note 1a)
60
(Note 1b)
130
°C/W
Device Marking
8280
Device
FDMD8280
Package
Power 3.3 x 5
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
1
FDMD8280 Rev.C
www.fairchildsemi.com