FDMC89521L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 60 V, 8.2 A, 17 mΩ

August 2012
FDMC89521L
Dual N-Channel PowerTrench^® MOSFET
60 V, 8.2 A, 17 mΩ
Features
General Description
„ Max r_DS(on) = 17 mΩ at V_GS = 10 V, I_D = 8.2 A
„ Max r_DS(on) = 27 mΩ at V_GS = 4.5 V, I_D = 6.7 A
„ Termination is Lead-free
„ RoHS Compliant
This device includes two 60 V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
„ Battery Protection
„ Load Switching
„ Bridge Topologies
Pin 1
G1 S1 S1 S1
G1
G2
D1
S1
S2
D2
S1
S2
G2 S2 S2 S2
S1
S2
Power 33
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
60
±20
8.2
40
32
1.9
0.8
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
155
°C/W
Device Marking
FDMC89521L
Device
FDMC89521L
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC89521L Rev. C
www.fairchildsemi.com