FDMC8884_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ

FDMC8884
N-Channel Power Trench^® MOSFET
30 V, 15 A, 19 mΩ
April 2012
Features
General Description
„ Max r_DS(on) = 19 mΩ at V_GS = 10 V, I_D = 9.0 A
„ Max r_DS(on) = 30 mΩ at V_GS = 4.5 V, I_D = 7.2 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top
Bottom
Pin 1
S ^SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
15
24
9.0
40
24
18
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
6.6
(Note 1a)
53
°C/W
Device Marking
FDMC8884
Device
FDMC8884
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC8884 Rev.E3
www.fairchildsemi.com