FDMC8878_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30V, 16.5A, 14m

FDMC8878
N-Channel Power Trench^® MOSFET
30V, 16.5A, 14m:
Features
General Description
July 2012
„ Max r_DS(on) = 14m: at V_GS = 10V, I_D = 9.6A
„ Max r_DS(on) = 17m: at V_GS = 4.5V, I_D = 8.7A
„ Low Profile - 0.8 mm max in MLP 3.3X3.3
„ RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
„ DC - DC Conversion
Top
87 65
Bottom
DD D D
1 234
G S S S _{Pin 1}
MLP 3.3x3.3
D5
D6
D7
D₈
4^G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
16.5
38
9.6
60
31
2.1
-55 to +150
Units
V
V
A
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4
(Note 1a)
60
°C/W
Device Marking
FDMC8878
Device
FDMC8878
Package
MLP 3.3X3.3
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC8878 Rev.D4
www.fairchildsemi.com