FDMC8854 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm

FDMC8854
N-Channel Power Trench^® MOSFET
30V, 15A, 5.7mΩ
Features
General Description
February 2007
tm
„ Max r_DS(on) = 5.7mΩ at V_GS = 10V, I_D = 15A
„ Max r_DS(on) = 7.6mΩ at V_GS = 4.5V, I_D = 13A
„ Low Profile - 1mm max in Power 33
„ RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
„ DC - DC Conversion
Bottom
Top
8
7
6
5
D
D
D
D
5
4
6
3
21
43
7
2
G
S
S
8
1
S
Power 33
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
15
67
15
30
41
2.0
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
60
°C/W
Device Marking
FDMC8854
Device
FDMC8854
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMC8854 Rev.C
www.fairchildsemi.com