FDMC8678S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Power Trench® SyncFET TM 30V, 18A, 5.2mΩ

December 2007
FDMC8678S
tm
N-Channel Power Trench^® SyncFET^TM
30V, 18A, 5.2mΩ
Features
General Description
„ Max r_DS(on) = 5.2mΩ at V_GS = 10V, I_D = 15A
„ Max r_DS(on) = 8.7mΩ at V_GS = 4.5V, I_D = 12A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
The FDMC8678S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest r_DS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
„ MSL1 robust package design
„ RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
S
S
G
D₅
D6
4^G
3S
Bottom
D
D
D
D
Power 33
TOP
D₇
D8
2^S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
66
15
60
181
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
8678S
Device
FDMC8678S
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMC8678S Rev.C
www.fairchildsemi.com