FDMC8676_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

December 2007
FDMC8676
tm
N-Channel PowerTrench^® MOSFET
30V, 18A, 5.9mΩ
Features
General Description
„ Max r_DS(on) = 5.9mΩ at V_GS = 10V, I_D = 14.7A
„ Max r_DS(on) = 9.3mΩ at V_GS = 4.5V, I_D = 11.5A
„ Low Profile - 1mm max in Power 33
„ RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r_DS(on) has been maintained to
provide an extremely versatile device.
Applications
„ High efficiency DC-DC converter
„ Notebook DC-DC conversion
„ Multi purpose point of load
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
E_AS
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
T_C = 25°C
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 3)
Ratings
30
±20
18
66
16
60
41
2.3
216
-55 to +150
Units
V
V
A
W
mJ
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
FDMC8676
Device
FDMC8676
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDMC8676 Rev.C
www.fairchildsemi.com