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FDMC86520L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ | |||
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August 2011
FDMC86520L
N-Channel Power Trench® MOSFET
60 V, 22 A, 7.9 mΩ
Features
 Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
 Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
 Low Profile - 1 mm max in Power 33
 100% UIL Tested
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
 Primary Switch in isolated DC-DC
 Synchronous Rectifier
 Load Switch
Top
Bottom
Pin 1
S SG
S
DD
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D5
D6
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
4G
3S
2S
1S
Ratings
60
±20
22
55
13.5
60
79
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.1
(Note 1a)
53
°C/W
Device Marking
FDMC86520L
Device
FDMC86520L
Package
Power 33
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC86520L Rev.C
www.fairchildsemi.com
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