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FDMC86520DC Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ
FDMC86520DC
September 2012
N-Channel Dual CoolTM PowerTrench® MOSFET
60 V, 40 A, 6.3 mΩ
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A
„ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Pin 1
G
S
S
S
S
D
S
D
D
D
D
D
Top
Power 33
Bottom
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
60
±20
40
17
80
128
73
3.0
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
86520
Device
FDMC86520DC
Package
Dual CoolTM Power 33
(Top Source)
4.2
(Bottom Drain)
1.7
(Note 1a)
42
(Note 1b)
105
(Note 1i)
17
(Note 1j)
26
(Note 1k)
12
Reel Size
13’’
Tape Width
12 mm
°C/W
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC86520DC Rev. C
www.fairchildsemi.com
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