FDMC86320 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m

FDMC86320
N-Channel Power Trench^® MOSFET
80 V, 22 A, 11.7 mΩ
June 2014
Features
General Description
„ Max r_DS(on) = 11.7 mΩ at V_GS = 10 V, I_D = 10.7 A
„ Max r_DS(on) = 16 mΩ at V_GS = 8 V, I_D = 8.5 A
„ MSL1 robust package design
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Top
Bottom
Pin 1
S ^SG
S
S
D
S
D
S
D
DD
D
D
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
22
10.7
50
60
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.1
(Note 1a)
53
°C/W
Device Marking
FDMC86320
Device
FDMC86320
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC86320 Rev.C2
www.fairchildsemi.com