FDMC86259P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

February 2014
FDMC86259P
P-Channel PowerTrench^® MOSFET
-150 V, -13 A, 107 m:
Features
General Description
„ Max r_DS(on) = 107 m: at V_GS = -10 V, I_D = -3 A
„ Max r_DS(on) = 137 m: at V_GS = -6 V, I_D = -2.7 A
„ Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ This product is optimised for fast switching applications as
well as load switch applications
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ Active Clamp Switch
„ Load Switch
Pin 1
Pin 1
SS
S
S
D
G
S
D
D
D
DD
Top
Bottom
Power 33
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-150
±25
-13
-3.2
-20
181
62
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.0
(Note 1a)
53
°C/W
Device Marking
FDMC86259P
Device
FDMC86259P
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
1
FDMC86259P Rev.C
www.fairchildsemi.com