FDMC8622 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m

September 2012
FDMC8622
N-Channel Power Trench^® MOSFET
100 V, 16 A, 56 m:
Features
General Description
„ Max r_DS(on) = 56 m: at V_GS = 10 V, I_D = 4 A
„ Max r_DS(on) = 90 m: at V_GS = 6 V, I_D = 3 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Application
„ DC-DC Primary Switch
D
D
D
D
D5
D6
D7
4G
3S
2S
G
SS
S
MLP 3.3X3.3
D8
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
T_C = 25 °C
TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
Ratings
100
±20
16
16
4
30
37
31
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMC8622
Device
FDMC8622
Package
MLP 3.3X3.3
(Note 1)
4.0
(Note 1a)
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC8622 Rev.C2
www.fairchildsemi.com