FDMC86012 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 m

October 2012
FDMC86012
N-Channel Power Trench^® MOSFET
30 V, 88 A, 2.7 mΩ
Features
„ Max r_DS(on) = 2.7 mΩ at V_GS = 4.5 V, I_D = 23 A
„ Max r_DS(on) = 4.7 mΩ at V_GS = 2.5 V, I_D = 17.5 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free
„ 100% UIL Tested
„ RoHS Compliant
General Description
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r_DS(on) has been maintained to
provide a sub logic-level device.
Applications
„ 3.3 V input synchronous buck switch
„ Synchronous rectifier
Pin 1
Pin 1
S
S
SG
S
D
S
D
D
DD
D
Top
Bottom
Power 33
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
30
±12
88
23
230
337
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.3
(Note 1a)
53
°C/W
Device Marking
FDMC86012
Device
FDMC86012
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC86012 Rev. C
www.fairchildsemi.com