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FDMC8588 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ | |||
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FDMC8588
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
June 2012
Features
General Description
 Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A
 State-of-the-art switching performance
 Lower output capacitance, gate resistance, and gate charge
boost efficiency
 Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
 RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
 High side switching for high end computing
 High power density DC-DC synchronous buck converter
Top
Bottom
S Pin 1
S
D
S
S
G
S
D
S
D
D
D
D
G
D
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package limited) TC = 25 °C
- Continuous (Silicon Limited) TC = 25 °C
- Continuous
- Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±12
40
59
16.5
60
29
26
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
Thermal Resistance, Junction to Case
TC = 25 °C
4.7
RθJA
Thermal Resistance, Junction to Ambient
TA = 25 °C
(Note 1a)
53
Package Marking and Ordering Information
°C/W
Device Marking
08OD
Device
FDMC8588
Package
Power 33
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC8588 Rev.D3
www.fairchildsemi.com
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