FDMC8554 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm

February 2007
FDMC8554
N-Channel Power Trench^® MOSFET
tm
20V, 16.5A, 5mΩ
Features
General Description
„ Max r_DS(on) = 5mΩ at V_GS = 10V, I_D = 16.5A
„ Max r_DS(on) = 6.4mΩ at V_GS = 4.5V, I_D = 14A
„ Low Profile - 1mm max in a MicroFET 3.3x3.3 mm
„ RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low
rdson.
Application
„ Synchronous rectifier
„ ORing FET
„ POL rectifier
Bottom
8
7
6
5
1
2
3
4
Top
D
D
D
D
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
Power 33
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
20
±20
16.5
72
16.5
36
41
2.0
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
60
°C/W
Device Marking
FDMC8554
Device
FDMC8554
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMC8554 Rev.C
www.fairchildsemi.com