FDMC8360L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m

June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench^® MOSFET
40 V, 80 A, 2.1 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max r_DS(on) = 2.1 mΩ at V_GS = 10 V, I_D = 27 A
„ Max r_DS(on) = 3.1 mΩ at V_GS = 4.5 V, I_D = 22 A
„ High performance technology for extremely low
r_DS(on)
„ Termination is Lead-free
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
„ DC-DC Conversion
Pin 1
Pin 1
SS
SG
S
D
S
D
D
DD
D
Top
Bottom
Power 33
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
40
±20
80
27
240
294
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.3
(Note 1a)
53
°C/W
Device Marking
FDMC8360L
Device
FDMC8360L
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMC8360L Rev. C1
www.fairchildsemi.com