FDMC8327L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.7 mΩ

May 2012
FDMC8327L
N-Channel PowerTrench^® MOSFET
40 V, 14 A, 9.7 mΩ
Features
„ Max r_DS(on) = 9.7 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 12.5 mΩ at V_GS = 4.5 V, I_D = 10 A
„ Low Profile - 0.8mm max in Power 33
„ 100% UIL test
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
Top
Bottom
8765
DD D D
S
D
S
D
S
D
G
D
1 234
GS S S
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
14
43
12
60
25
30
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
4.2
(Note 1a)
53
°C/W
Device Marking
FDMC8327L
Device
FDMC8327L
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC8327L Rev.C1
www.fairchildsemi.com