FDMC8296 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30V, 18A, 8.0mΩ

March 2008
FDMC8296
tm
N-Channel Power Trench^® MOSFET
30V, 18A, 8.0mΩ
Features
General Description
„ Max r_DS(on) = 8.0mΩ at V_GS = 10V, I_D = 12A
„ Max r_DS(on) = 13.0mΩ at V_GS = 4.5V, I_D = 10A
„ High performance trench technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
device is welll suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Pin 1
D
D
D
D
S
S
S
G
D5
D6
D7
D8
4G
3S
2S
1S
TOP
Power 33
Bottom
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
44
12
52
60
27
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4.6
(Note 1a)
53
°C/W
Device Marking
FDMC8296
Device
FDMC8296
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMC8296 Rev.B
www.fairchildsemi.com