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FDMC8026S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFETTM | |||
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FDMC8026S
N-Channel PowerTrench® SyncFETTM
30 V, 21 A, 4.4 mΩ
June 2013
Features
General Description
 Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
 Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
 Advanced package and silicon combination for low rDS(on) and
high efficiency
 SyncFET Schottky Body Diode
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
The FDMC8026S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic schottky
body diode.
Applications
 Synchronous Rectifier for DC/DC Converters
 Notebook Vcore/GPU low side switch
 Networking Point of Load low side switch
 Telecom secondary side rectification
Top
Bottom
Pin 1
S SG
S
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalance Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
21
76
19
100
66
36
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.4
(Note 1a)
53
°C/W
Device Marking
FDMC8026S
Device
FDMC8026S
Package
MLP 3.3X3.3
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMC8026S Rev.C4
www.fairchildsemi.com
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