FDMC7696 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 12 A, 11.5 mΩ

FDMC7696
N-Channel PowerTrench^® MOSFET
30 V, 12 A, 11.5 mΩ
November 2011
Features
General Description
„ Max r_DS(on) = 11.5 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 14.5 mΩ at V_GS = 4.5 V, I_D = 10 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ DC/DC Buck Converters
„ Notebook battery power management
„ Load Switch in Notebook
Top
8765
Bottom
DD D D
D5
4G
D6
3S
D7
2S
1 234
GS S S
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
1S
Ratings
30
±20
20
38
12
50
21
25
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
5.0
(Note 1a)
53
°C/W
Device Marking
FDMC7696
Device
FDMC7696
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC7696 Rev.C8
www.fairchildsemi.com