FDMC7678 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

FDMC7678
N-Channel Power Trench^® MOSFET
30 V, 19.5 A, 5.3 mΩ
November 2013
Features
General Description
„ Max r_DS(on) = 5.3 mΩ at V_GS = 10 V, I_D = 17.5 A
„ Max r_DS(on) = 6.8 mΩ at V_GS = 4.5 V, I_D = 15.0 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top
8765
Bottom
DD D D
1 234
G S S S _{Pin 1}
MLP 3.3x3.3
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 4)
(Note 1a)
Ratings
30
±20
19.5
63
17.5
70
54
31
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4.0
(Note 1a)
53
°C/W
Device Marking
FDMC7678
Device
FDMC7678
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC7678 Rev. C2
www.fairchildsemi.com