FDMC7660_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 mΩ

June 2012
FDMC7660
N-Channel PowerTrench^® MOSFET
30 V, 20 A, 2.2 mΩ
Features
General Description
„ Max r_DS(on) = 2.2 mΩ at V_GS = 10 V, I_D = 20 A
„ Max r_DS(on) = 3.3 mΩ at V_GS = 4.5 V, I_D = 18 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ DC - DC Buck Converters
„ Point of Load
„ High Efficiency Load Switch and Low Side Switching
Top
Bottom
S ^{Pin 1}
S
D
S
S
G
S
D
S
D
D
D
D
G
D
D
Power 33
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
40
100
20
200
200
41
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
FDMC7660
Device
FDMC7660
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC7660 Rev.C5
www.fairchildsemi.com