FDMC7660S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Power Trench® SyncFET 30 V, 20 A, 2.2 mΩ

December 2009
FDMC7660S
N-Channel Power Trench^® SyncFET^™
30 V, 20 A, 2.2 mΩ
Features
„ Max r_DS(on) = 2.2 mΩ at V_GS = 10 V, I_D = 20 A
„ Max r_DS(on) = 2.95 mΩ at V_GS = 4.5 V, I_D = 18 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free and RoHS Compliant
General Description
The FDMC7660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest r_DS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
D
D
Top
Power 33
Bottom
D5
D₆
D7
D8
4^G
3^S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
40
100
20
200
128
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
FDMC7660S
Device
FDMC7660S
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMC7660S Rev.C
www.fairchildsemi.com