FDMC7572S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Power Trench® SyncFETTM 25 V, 40 A, 3.15 mΩ

August 2011
FDMC7572S
N-Channel Power Trench^® SyncFET^TM
25 V, 40 A, 3.15 mΩ
Features
General Description
„ Max r_DS(on) = 3.15 mΩ at V_GS = 10 V, I_D = 22.5 A
„ Max r_DS(on) = 4.7 mΩ at V_GS = 4.5 V, I_D = 18 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ 100% UIL Tested
„ RoHS Compliant
The FDMC7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
S ^{Pin 1}
S
S
G
D₅
D₆
4G
3S
D
D
D
D
Power 33
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D₇
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1^S
Ratings
25
±20
40
103
22.5
120
84
52
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.4
(Note 1a)
53
°C/W
Device Marking
FDMC7572S
Device
FDMC7572S
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC7572S Rev.C1
www.fairchildsemi.com