FDMC6890NZ Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench MOSFET

FDMC6890NZ
Dual N-Channel PowerTrench^® MOSFET
20V, 4A, Q1:68mΩ, Q2:100mΩ
Features
General Description
October 2006
tm
Q1: N-Channel
„ Max r_DS(on) = 68mΩ at V_GS = 4.5V, I_D = 4A
„ Max r_DS(on) = 100mΩ at V_GS = 2.5V, I_D = 3A
Q2: N-Channel
„ Max r_DS(on) = 100mΩ at V_GS = 4.5V, I_D = 4A
„ Max r_DS(on) = 150mΩ at V_GS = 2.5V, I_D = 2A
„ Low gate Charge
„ RoHS Compliant
FDMC6890NZ is a compact single package solution for DC to
DC converters with excellent thermal and switching
characteristics. Inside the Power 33 package features two
N-channel MOSFETs with low on-state resistance and low gate
charge to maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Application
„ DC - DC Conversion
Up
S1 D1/S2 D2
G1 D1/S2 G2
Power 33
Bottom
G1 D1/S2 G2
D1 D2
S1 D1/S2 D2
D2
4
D1/S2 ₅
S1
6
G2
3
2 ^D1/S2
1 ^G1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Power Dissipation (Steady State) Q1
Power Dissipation (Steady State) Q2
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
Q1
Q2
20
20
±12
±12
4
10
1.92
1.78
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient Q1
Thermal Resistance, Junction to Ambient Q2
Package Marking and Ordering Information
(Note 1a)
65
70
°C/W
Device Marking
6890N
Device
FDMC6890NZ
Package
Power 33
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC6890NZ Rev.C
www.fairchildsemi.com