FDMC6679AZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ

FDMC6679AZ
P-Channel PowerTrench^® MOSFET
-30 V, -20 A, 10 mΩ
Features
„ Max r_DS(on) = 10 mΩ at V_GS = -10 V, I_D = -11.5 A
„ Max r_DS(on) = 18 mΩ at V_GS = -4.5 V, I_D = -8.5 A
„ HBM ESD protection level of 8 kV typical(note 3)
„ Extended V_GSS range (-25 V) for battery applications
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
July 2009
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) and ESD protection.
Applications
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
Top
Bottom
Pin 1
S ^SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-51
-11.5
-32
41
2.3
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
FDMC6679AZ
Device
FDMC6679AZ
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMC6679AZ Rev.D1
www.fairchildsemi.com