FDMC6675BZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ

FDMC6675BZ
P-Channel Power Trench^® MOSFET
-30 V, -20 A, 14.4 mΩ
June 2009
Features
General Description
„ Max r_DS(on) = 14.4 mΩ at V_GS = -10 V, I_D = -9.5 A
„ Max r_DS(on) = 27.0 mΩ at V_GS = -4.5 V, I_D = -6.9 A
„ HBM ESD protection level of 8 kV typical(note 3)
„ Extended V_GSS range (-25 V) for battery applications
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) and ESD protection.
Application
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
Top
Bottom
Pin 1
S ^SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-40
-9.5
-32
36
2.3
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.4
(Note 1a)
53
°C/W
Device Marking
FDMC6675BZ
Device
FDMC6675BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMC6675BZ Rev.D1
www.fairchildsemi.com