FDMC6296 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel Logic-Level Power Trench MOSFET

FDMC6296
November 2010
Single N-Channel Logic-Level Power Trench^® MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
General Description
„ Max r_DS(on) = 10.5 mΩ at V_GS = 10 V, I_D = 11.5 A
„ Max r_DS(on) = 15 mΩ at V_GS = 4.5 V, I_D = 10 A
„ Low Qg, Qgd and Rg for efficient switching performance
„ RoHS Compliant
This single N-Channel MOSFET in the thermally efficient
MicroFET Package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
between r_DS(on) and gate charge this device can be effectively
used as a “high side” control swtich or “low side” synchronous
rectifier.
Application
„ Point of Load Converters
„ 1/16 Brick Synchronous Rectifier
Top
Bottom
Pin 1
S ^SG
S
MLP 3.3X3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
11.5
40
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3
(Note 1a)
53
°C/W
Device Marking
FDMC6296
Device
FDMC6296
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMC6296 Rev. C2
www.fairchildsemi.com