FDMC5614P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

FDMC5614P
P-Channel PowerTrench^® MOSFET
-60V, -13.5A, 100mΩ
January 2007
tm
Features
General Description
„ Max r_DS(on) = 100mΩ at V_GS = -10V, I_D = -5.7A
„ Max r_DS(on) = 135mΩ at V_GS = -4.5V, I_D = -4.4A
„ Low gate charge
„ Fast switching speed
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor's advanced PowerTrench^® process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V-20V).
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ RoHS Compliant
Application
„ Power management
„ Load switch
„ Battery protection
Bottom
78
6
5
Top
D
D
D
D
21
43
Power 33
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-60
±20
-13.5
-14
-5.7
-23
42
2.1
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.0
(Note 1a)
60
°C/W
Device Marking
5614P
Device
FDMC5614P
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC5614P Rev.C
www.fairchildsemi.com