FDMC4435BZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel Power Trench® MOSFET -30V, -18A, 20.0mΩ

February 2008
FDMC4435BZ
tm
P-Channel Power Trench^® MOSFET
-30V, -18A, 20.0mΩ
Features
General Description
„ Max r_DS(on) = 20.0mΩ at V_GS = -10V, I_D = -8.5A
„ Max r_DS(on) = 37.0mΩ at V_GS = -4.5V, I_D = -6.3A
„ Extended V_GSS range (-25V) for battery applications
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ HBM ESD protection level >7kV typical (Note 4)
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
devie is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Bottom
Top
Pin 1
S
SS
G
D
DD
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-30
±25
-18
-31
-8.5
-50
24
31
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4
(Note 1a)
53
°C/W
Device Marking
FDMC4435BZ
Device
FDMC4435BZ
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMC4435BZ Rev.C
www.fairchildsemi.com