FDMC3612 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

FDMC3612
N-Channel Power Trench^® MOSFET
100 V, 12 A, 110 mΩ
February 2012
Features
General Description
„ Max r_DS(on) = 110 mΩ at V_GS = 10 V, I_D = 3.3 A
„ Max r_DS(on) = 122 mΩ at V_GS = 6 V, I_D = 3.0 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ DC - DC Conversion
„ PSE Switch
Top
8765
Bottom
DDD D
1 234
GS S S
MLP 3.3x3.3
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
16
12
3.3
15
32
35
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.5
(Note 1a)
53
°C/W
Device Marking
FDMC3612
Device
FDMC3612
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC3612 Rev.C2
www.fairchildsemi.com