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| FDMC3300NZA_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 8A, 26mΩ | |||
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January 2007
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET tm
20V, 8A, 26mΩ
Features
General Description
 Max rDS(on) = 26mΩ at VGS = 4.5V, ID = 8.0A
 Max rDS(on) = 34mΩ at VGS = 2.5V, ID = 7.0A
 >2000V ESD protection
 Low Profile - 1mm maximum - in the new package MLP
3.3x3.3 mm
This dual N-Channel MOSFET has been designed using
Fairchild Semiconductor's advanced PowerTrench® process to
optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame
with all the drains on one side of the package.
 RoHS Compliant
Application
 Li-lon Battery Pack
DD22
D2
D1
D1
Power 33
G2
S2
G1
S1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Rating
20
±12
8
40
2.1
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1b)
135
°C/W
Device Marking
3300A
Device
FDMC3300NZA
Package
Power 33
Reel Size
7â
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC3300NZA Rev.C
www.fairchildsemi.com
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