FDMC3300NZA Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

December 2005
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench^®
MOSFET
8A,20V,26mΩ
General Description
Features
This Dual N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R_DS(on)@V_GS=2.5v on special MicroFET
leadframe with all the drains on one side of the package.
Applications
„ Li-lon Battery Pack
AD ^{FREE I}
„ R_DS(ON) = 26mΩ @ V_GS = 4.5 V, I_D = 8A
„ R_DS(ON) = 34mΩ @ V_GS = 2.5 V, I_D = 7A
„ >2000V ESD protection
„ Low Profile-1mm maxium-in the new package MicroFET
3.3x3.3 mm
„ Pb-free and RoHS Compliant
DD22
1
D2
D1
D1
2
3
G2
S2
4
G1
S1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
P_D
T_J, T_STG
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
3300A
Device
FDMC3300NZA
Reel Size
7”
Tape Width
12mm
©2005 Fairchild Semiconductor Corporation
1
FDMC3300NZA Rev B
8
7
6
5
Ratings
20
±12
8
40
2.4
-55 to +150
Units
V
V
A
W
o_C
52
108
o_C/W
5
Quantity
3000 units
www.fairchildsemi.com